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RA60H4047M1 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RA60H4047M1
Description  400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4047M1
RA60H4047M1
MITSUBISHI ELECTRIC
25
th Oct 2006
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V, Pin=0W
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=50mW
6
V
Pin
Input Power
100
mW
Pout
Output Power
80
W
Tcase(OP) Operation Case Temperature Range
f=400-470MHz,
VGG<5V
-30 to +100
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
F
Frequency Range
400
470
MHz
Pout
Output Power
VDD=12.5V
60
W
ηT
Total Efficiency
VGG=5V
40
%
2fo
2
nd Harmonic
Pin=50mW
-40
dBc
ρin
Input VSWR
3:1
IGG
Gate Current
VDD=0V, VGG=5V, Pin=0W
5
6
mA
IDD
Leakage Current
VDD=17V, VGG=0V, Pin=0W
1
mA
Stability
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <65W (VGG control), Load VSWR=3:1
No parasitic oscillation
Load VSWR Tolerance
VDD=15.2V, Pin=50mW,
Pout=60W (VGG control), Load VSWR=20:1
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.




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