|
| IRFS4229PBF |
|
||
|
IRF |
|
1 page
www.irf.com 1 04/12/06 IRFS4229PbF Notes through
are on page 9 Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l 175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability S D G PDP SWITCH GD S Gate Drain Source D2Pak D S D G * RθJC (end of life) for D 2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. VDS min 250 V VDS (Avalanche) typ. 300 V RDS(ON) typ. @ 10V 42 m : IRP max @ TC= 100°C 91 A TJ max 175 °C Key Parameters Absolute Maximum Ratings Parameter Units VGS Gate-to-Source Voltage V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c IRP @ TC = 100°C Repetitive Peak Current g PD @TC = 25°C Power Dissipation W PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C T J Operating Junction and °C T STG Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case f ––– 0.45* RθJA Junction-to-Ambient f ––– 62 Max. 32 180 45 ±30 91 300 -40 to + 175 10lb xin (1.1Nxm) 330 190 2.2 PD - 97080 |