Part Name
         Description
IRFS4229PBF

 PDP SWITCH ( 9 Page)


IRF
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1
04/12/06
IRFS4229PbF
Notes
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Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
l
Advanced Process Technology
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l
Low QG for Fast Response
l
High Repetitive Peak Current Capability for
Reliable Operation
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
Improved Ruggedness
l
Repetitive Avalanche Capability for Robustness
and Reliability
S
D
G
PDP SWITCH
GD
S
Gate
Drain
Source
D2Pak
D
S
D
G
* RθJC (end of life) for D
2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
VDS min
250
V
VDS (Avalanche) typ.
300
V
RDS(ON) typ. @ 10V
42
m
:
IRP max @ TC= 100°C
91
A
TJ max
175
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
VGS
Gate-to-Source Voltage
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
IRP @ TC = 100°C
Repetitive Peak Current
g
PD @TC = 25°C
Power Dissipation
W
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
N
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
f
–––
0.45*
RθJA
Junction-to-Ambient
f
–––
62
Max.
32
180
45
±30
91
300
-40 to + 175
10lb
xin (1.1Nxm)
330
190
2.2
PD - 97080



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