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HAT2160H Rev.3.00 Sep 26, 2005 page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 20 V, VGS = 0 Gate to source cutoff voltage VGS(off) 0.8 — 2.3 V VDS = 10 V, I D = 1 mA RDS(on) — 2.1 2.6 m Ω ID = 30 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 2.8 4.1 m Ω ID = 30 A, VGS = 4.5 V Note4 Forward transfer admittance |yfs| 78 130 — S ID = 30 A, VDS = 10 V Note4 Input capacitance Ciss — 7750 — pF Output capacitance Coss — 1220 — pF Reverse transfer capacitance Crss — 450 — pF VDS = 10 V, VGS = 0, f = 1 MHz Gate resistance Rg — 0.5 — Ω Total gate charge Qg — 54 — nC Gate to source charge Qgs — 19 — nC Gate to drain charge Qgd — 14 — nC VDD = 10 V, VGS = 4.5 V, ID = 60 A Turn-on delay time td(on) — 17 — ns Rise time tr — 60 — ns Turn-off delay time td(off) — 65 — ns Fall time tf — 15 — ns VGS = 10 V, ID = 30 A, VDD ≅ 10 V, RL = 0.33 Ω, Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.82 1.07 V IF = 60 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 40 — ns IF = 60 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test |
