Part Name
         Description
HAT2160H

 Silicon N Channel Power MOS FET Power Switching ( 8 Page)


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HAT2160H
Rev.3.00 Sep 26, 2005 page 5 of 7
Source to Drain Voltage
VSD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L
• I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
Channel Temperature Tch (
°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
100
80
60
40
20
25
50
75
100
125
150
0
IAP = 30 A
VDD = 10 V
duty < 0.1 %
Rg
≥ 50 Ω
100
80
60
40
20
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
VGS = 0
10 V
3
1
0.3
0.1
0.03
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C



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