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BU2520DW Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BU2520DW
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DW
Fig.3. Switching times test circuit.
Fig.4. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
0.1
10
IC / A
VCESAT / V
BU2520D
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
100
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1
10
IC / A
hFE
BU2520D
100
10
1
100
1
Tj = 25 C
Tj = 125 C
1 V
5 V
0
1
2
3
4
IB / A
VBESAT / V
BU2520D
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IC / A
VBESAT / V
BU2520D
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1
1
10
IB / A
VCESAT / V
BU2520D
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
September 1997
3
Rev 1.100




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