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BU2520DW Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU2520DW
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DW
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
100
-
300
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB = 7.5 V
-
50
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 6.0 A; IB = 1.2 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 6.0 A; IB = 1.2 A
-
-
1.1
V
h
FE
DC current gain
I
C = 1.0 A; VCE = 5 V
-
13
-
h
FE
I
C = 6 A; VCE = 5 V
5
7
9.5
V
F
Diode forward voltage
I
F = 6 A
-
-
2.2
V
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (16 kHz line
I
Csat = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit)
I
B(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dI
B/dt = 0.8 A / µs)
t
s
Turn-off storage time
4.5
5.5
µs
t
f
Turn-off fall time
0.35
0.5
µs
Fig.1. Switching times waveforms (16 kHz).
Fig.2. Switching times definitions.
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100




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