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BU2520DW Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BU2520DW
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DW
Fig.9. Typical turn-off losses. T
j = 85˚C
Eoff = f (I
B); parameter IC; parameter frequency
Fig.10. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Fig.11. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Tmb)
Fig.12. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.13. Forward bias safe operating area. T
mb = 25 ˚C
I
CDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
0.1
1
10
IB / A
Eoff / uJ
1000
100
10
IC = 6 A
5 A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
D =
tp
tp
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
BU2520A
IC / A
100
10
1
0.1
0.01
1
10
100
1000
VCE / V
ICM
ICDC
Ptot
100 us
1 ms
10 ms
DC
30 us
tp =
= 0.01
0.1
1
10
IB / A
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
ts
tf
IC =
6 A
5 A
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
September 1997
4
Rev 1.100




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