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G -LINK
GLT440L16
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug. 2000 (Rev.1.1)
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 4 -
Truth Table: GLT440L16
Function
RAS
CASL
CASH
WE
OE
ADDRESS
DQs
Notes
Stanby
H
H
H
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL Data Out
Read: Lower Byte
L
L
H
H
L
ROW/COL Lower Byte,Data-Out
Upper Byte,High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL Lower Byte,High-Z
Upper Byte,Data-Out
Write: Word(Early
Write)
L
L
L
L
X
ROW/COL Data-In
Write: Lower Byte
(Early)
L
L
H
L
X
ROW/COL Lower Byte,Data-In
Upper Byte,High-Z
Write: Upper Byte
(Early)
L
H
L
L
X
ROW/COL Lower Byte,High-Z
Upper Byte,Data-In
Read Write
L
L
L
H
→L
L
→H ROW/COL Data-Out,Data-In
1,2
EDO-Page-
Mode Read
1st Cycle
2nd Cycle
L
L
H
→L
H
→L
H
→L
H
→L
H
H
L
L
ROW/COL
COL
Data-Out
Data-Out
2
2
EDO-Page-
Mode Write
1st Cycle
2nd Cycle
L
L
H
→L
H
→L
H
→L
H
→L
L
L
X
X
ROW/COL
COL
Data-In
Data-In
2
2
EDO-Page-
Mode Read-
Write
1st Cycle
2nd Cycle
L
L
H
→L
H
→L
H
→L
H
→L
H
→L
H
→L
L
→H
L
→H
ROW/COL
COL
Data-Out,Data-In
Data-Out,Data-In
1,2
1,2
Hidden
Refresh
Read
Write
L
→H→L
L
→H→L
L
L
L
L
H
H
L
L
ROW/COL
ROW/COL
Data-Out
Data-In
2
2
RAS
-Only Refresh
L
H
H
X
X
ROW
High-Z
CBR Refresh
H
→L
L
L
X
X
High-Z
3
Notes:
1. These READ cycles may also be BYTE READ cycles (either UCAS or LCAS active).
2. These WRITE cycles may also be BYTE READ cycles (either UCAS or LCAS active).
3. EARLY WRITE only.
4. At least one of the two CAS signals must be active ( UCAS or LCAS ).