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RA13H8891MA Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. RA13H8891MA
Description  889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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 4 page
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA13H8891MA
RA13H8891MA
MITSUBISHI ELECTRIC
24 Jan 2006
4/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
5
10
15
20
25
30
22.533.544.5
5
5.5
6
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=880MHz,
VDD=12.5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
6
7
8
Pout
f=915MHz,
VGG=5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
22.5
33.5
4
4.5
5
5.5
6
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=900MHz,
VDD=12.5V,
Pin=200mW
IDD
0
5
10
15
20
25
30
22.533.544.5
5
5.5
6
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=915MHz,
VDD=12.5V,
Pin=200mW
IDD




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