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RA13H8891MA Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RA13H8891MA
Description  889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA13H8891MA
RA13H8891MA
MITSUBISHI ELECTRIC
24 Jan 2006
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=200mW
6
V
Pin
Input Power
400
mW
Pout
Output Power
f=889-915MHz,
ZG=ZL=50Ω
25
W
Tcase(OP)
Operation Case Temperature Range
-30 to +110
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
889
915
MHz
Pout
Output Power
13
W
η
T
Total Efficiency
30
%
2fo
2
nd Harmonic
-35
dBc
ρ
in
Input VSWR
3:1
IGG
Gate Current
VDD=12.5V
VGG=5V
Pin=200mW
1
mA
Stability
VDD=10.0-15.2V, Pin=100-300mW,
Pout=1 to 20W (VGG control), Load VSWR=3:1
No parasitic oscillation
Load VSWR Tolerance
VDD=15.2V, Pin=200mW, Pout=13W (VGG control),
Load VSWR=20:1
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.




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