2

RF Device Data

Freescale Semiconductor

MRF5S21150HR3 MRF5S21150HSR3

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C7 (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

2.5

—

3.5

Vdc

Gate Quiescent Voltage

—

3.7

—

Vdc

Drain-Source On-Voltage

—

0.26

0.3

Vdc

Forward Transconductance

—

9

—

S

Reverse Transfer Capacitance

—

3.2

—

pF

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in

3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%

Probability on CCDF.

Power Gain

11

12.5

—

dB

Drain Efficiency

23

25

—

%

Intermodulation Distortion

IM3

-37

-35

dBc

Adjacent Channel Power Ratio

ACPR

—

-39

-37

dBc

Input Return Loss

IRL

—

-12

-9

dB

1. Part internally matched both on input and output.