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BU2508AW Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BU2508AW
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit (BU2508A).
Fig.6. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
BU2508A
DIODE
0.01
1
100
10
1
0.1
10
h
IC / A
FE
Tj = 25 C
Tj = 125 C
5V
1V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2508A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
3
4
5
IC/IB=
+ 150 v nominal
adjust for ICsat
1mH
BY228
12nF
BU2508A
LB
IBend
-VBB
0.1
1
10
IC / A
VCESAT / V
BU2508A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
5
4
3
IC/IB=
September 1997
3
Rev 1.100




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