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BU2508AW Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU2508AW
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4.5 A; IB = 1.12 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4.5 A; IB = 1.7
A
-
-
1.1
V
h
FE
DC current gain
I
C = 100 mA;VCE = 5 V
-
13
-
h
FE
I
C = 4.5 A;VCE = 1 V
4
5.5
7.0
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I
Csat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
deflection circuit)
-V
BB = 4 V; (-dIB/dt = 0.6 A/µs)
t
s
Turn-off storage time
5.0
6.0
µs
t
f
Turn-off fall time
0.4
0.6
µs
Switching times (38 kHz line
I
Csat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
deflection circuit)
-V
BB = 4 V; (-dIB/dt = 0.6 A/µs)
t
s
Turn-off storage time
4.7
5.7
µs
t
f
Turn-off fall time
0.25
0.35
µs
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100




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