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BU2508AW Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BU2508AW
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AW
Fig.9. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.10. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.11. Typical turn-off losses. T
j = 85˚C
Eoff = f (I
B); parameter IC; f = 16 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Fig.13. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.14. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Tmb)
0
1
2
3
4
IB / A
VBESAT / V
BU2508A
1.2
1.1
1
0.9
0.8
0.7
0.6
6A
4.5A
3A
2A
Tj = 25 C
Tj = 125 C
IC=
0.1
1
10
IB / A
ts, tf / us
BU2508A
12
11
10
9
8
7
6
5
4
3
2
1
0
IC =
3.5A
4.5A
tf
ts
0.1
1
10
IB / A
VCESAT / V
BU2508A
10
1
0.1
Tj = 25 C
Tj = 125 C
3A
4.5A
6A
IC=2A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
D = 0
0.02
0.05
0.1
0.2
0.5
D =
tp
tp
T
T
P
t
D
0.1
1
10
IB / A
Eoff / uJ
BU2508A
1000
100
10
3.5A
IC = 4.5A
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
September 1997
4
Rev 1.100




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