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BU1506DX Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BU1506DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
0.01
1
100
10
1
10
0.1
Tj = 25 C
Tj = 125 C
h FE
IC / A
5V
1V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
VBESAT / V
IC / A
IC/IB =
3
4
5
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
0.1
1
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
VCESAT / V
IC / A
IC/IB =
5
4
3
September 1997
3
Rev 1.300




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