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BU1506DX Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BU1506DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.9. Typical turn-off losses. T
j = 85˚C
Eoff = f (I
B); parameter IC
Fig.10. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85˚C
Fig.11. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Ths)
0
1
2
3
4
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
VBESAT / V
IB / A
IC =
4A
3A
2.5A
0.1
1
10
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
IB / A
ts
tf
IC =
3A
2.5A
0.1
1
10
10
1
0.1
Tj = 25 C
Tj = 125 C
VCESAT / V
IB / A
IC = 2.5A
3A
4A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.1
1
10
1000
100
10
IC = 3A
2.5A
Eoff / uJ
IB / A
September 1997
4
Rev 1.300




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