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SCD5580 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SCD5580 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 15 page 2–2 SCD5580/5581/5582/5583/5584 Maximum Ratings DC Supply Voltage ......................................................... –0.5 to +7.0 Vdc Input Voltage Levels Relative to Ground.................................................................–0.5 toVCC+0.5 Vdc Operating Temperature .................................................. –40 °C to +85°C Storage Temperature ..................................................... –40 °C to +100°C Maximum Solder Temperature 0.063" below Seating Plane, t<5 sec ........................................................260 °C Relative Humidity at 85 °C.................................................................. 85% Maximum Number of LEDs on at 100% Brightness ............................128 Maximum Power Dissipation ......................................................1.7 Watts IC Junction Temperature .................................................................125 °C ESD (100 pF, 1.5 K Ω).........................................................................2 KV Maximum Input Current ............................................................. ±100 mA. Figure 1a. Data write cycle Figure 1b. Instruction cycle Figure 2. Maximum power dissipation vs. temperature LOAD DATA SDCLK TSDCW TSDCLK Period TLDS TDS TDH TLDH 3.5 V 1.5 V 3.5 V 1.5 V 3.5 V 1.5 V TSDCW TWR OR LOAD SDCLK DATA LOAD SDCLK DATA TBL D0 D7 D6 D5 D4 D3 D2 D1 D0 D0 D7 D6 D5 D4 D3 D2 D1 D0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 120 130 140 3.0 2.5 2.0 1.5 1.0 0.5 0.0 TA – °C Ambient Temperature θ JA=31°C/W Switching Specifications (over operating temperature range and VCC=4.5 V to 5.5 V) Note: TSDCW is the minimum time the SDCLK may be low or high. The SDCLK period must be a mini- mum of 200 ns. Symbol Description Min. Units TRC Reset Active Time 600 ns TLDS Load SetupTime 50 ns TDS Data Setup Time 50 ns TSDCLK Clock Period 200 ns TSDCW Clock Width 70 ns TLDH Load Hold Time 0 ns TDH Data Hold Time 25 ns TWR Total Write Time 2.2 µs TBL Time Between Loads 600 ns |
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