2SK3497

2003-07-16

2

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

—

—

10

µA

Drain cut−off current

—

—

100

µA

Drain−source breakdown

voltage

180

—

—

V

Gate threshold voltage

1.1

—

2.1

V

Drain−source saturation voltage

—

—

0.75

V

Forward transfer admittance

6.0

12.0

—

S

Input capacitance

—

2400

—

Reverse transfer capacitance

—

220

—

Output capacitance

—

30

—

pF

This transistor is an electrostatic sensitive device. Please handle with caution.

Marking

※

Lot Number

※

TYPE

K3497

Month (Starting from Alphabet A)

Year (Last Number of the Christian Era)

TOSHIBA