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2SK3497 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3497 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK3497 2003-07-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±12 V, VDS = 0 V — — 10 µA Drain cut−off current IDSS VDS = 180V, VGS = 0 V — — 100 µA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 180 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 — 2.1 V Drain−source saturation voltage VDS (ON) VGS = 7 V, ID = 5 A — — 0.75 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 A 6.0 12.0 — S Input capacitance Ciss — 2400 — Reverse transfer capacitance Crss — 220 — Output capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz — 30 — pF This transistor is an electrostatic sensitive device. Please handle with caution. Marking ※ Lot Number ※ TYPE K3497 Month (Starting from Alphabet A) Year (Last Number of the Christian Era) TOSHIBA |
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