K4C89363AF-TCFB datasheet(7/58 Pages) SAMSUNG

Part #	K4C89363AF-TCFB

Description	2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K4C89363AF

REV. 0.0 Nov. 2002

- 7 -

1. All voltages are referenced to Vss, VssQ.

2. V

REF

is expected to track variations in VddQ DC level of the transmitting device.

Peak to peak AC noise on V

REF may not exceed ± 2% of

V

REF (DC).

3. Overshoot Iimit : V

IH (max.) = VddQ + 0.7V with a pulse width <= 5ns

4. Undershoot Iimit : V

IL(min.) = -0.7V with a pulse width <= 5ns

5. V IH (DC) and V IL (DC) are levels to maintain the current logic state.

6. V

IH (AC) and V IL(AC) are levels to change to the new logic state.

7. V

ID is magnitude of the difference between CLK input level and CLK input level.

8. The value of Vx(AC) is expected to equal VddQ/2 of the transmitting device.

9. V

ISO means [V ICK(CLK) + V ICK(CLK )]/2

10. Refer to the figure below.

Notes

:

11. In the case of external termination, VTT(Termination Voltage) should be gone in the range of V REF(DC) ±0.04V.

Pin Capacitance (V

DD = 2.5V, V DDQ = 1.8V, f = 1 MHz, Ta = 25

o

C )

Note : These parameters are periodically sampled and not 100% tested.

Symbol

Parameter

Min

Max

Delts

Units

C

IN

Input Pin Capacitance

1.5

2.5

0.25

pF

C INC

Clock Pin (CLK, CLK ) Capacitance

1.5

2.5

0.25

pF

C I/O

DQ, DS, QS Capacitance

2.5

3.5

0.5

pF

C

NC

NC Pin Capacitance

-

1.5

-

pF

CLK

V

SS

V

ID (AC)

0 V Differential

V ISO

V

SS

V

ICK

V

ISO (min)

V

X

V

X

V

X

V

X

V

ICK

V

ICK

V

ICK

V

ISO(max)

V

X

V

ID (AC)

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