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K4M283233H-HG75 Datasheet(PDF) 7 Page - Samsung semiconductor

Part # K4M283233H-HG75
Description  1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4M283233H-HG75 Datasheet(HTML) 7 Page - Samsung semiconductor

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K4M283233H - F(H)N/G/L/F
7
Mobile SDRAM
January 2006
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP).
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
6. Maximum burst refresh cycle : 8
Parameter
Symbol
Version
Unit
Note
-60
-75
-7L
Row active to row active delay
tRRD(min)
12
15
15
ns
1
RAS to CAS delay
tRCD(min)
18
18
22.5
ns
1
Row precharge time
tRP(min)
18
18
22.5
ns
1
Row active time
tRAS(min)
42
45
45
ns
1
tRAS(max)
100
us
Row cycle time
tRC(min)
60
63
67.5
ns
1
Last data in to row precharge
tRDL(min)
2
CLK
2
Last data in to Active delay
tDAL(min)
tRDL + tRP
-
3
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
4
Number of valid output data
CAS latency=3
2
ea
5
Number of valid output data
CAS latency=2
1
Number of valid output data
CAS latency=1
0


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