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K4M283233H-FG60 Datasheet(PDF) 5 Page - Samsung semiconductor |
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K4M283233H-FG60 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 12 page K4M283233H - F(H)N/G/L/F 5 Mobile SDRAM January 2006 DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85 °C for Extended, -25 to 70°C for Commercial) NOTES: 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Internal TCSR can be supported. In comercial Temp : 45 °C/Max 70°C. In extended Temp : 45°C/Max 85°C. 4. It has +/-5 °C tolerance. 5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ). Parameter Symbol Test Condition Version Unit Note -60 -75 -7L Operating Current (One Bank Active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 80 65 65 mA 1 Precharge Standby Current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 0.5 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 0.5 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 12 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 5 Active Standby Current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 5 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 2 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 25 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 15 mA Operating Current (Burst Mode) ICC4 IO = 0 mA Page burst 4Banks Activated tCCD = 2CLKs 100 75 65 mA 1 Refresh Current ICC5 tRC ≥ tRC(min) 140 130 120 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V -N/L 330 uA -G/F Internal TCSR 45 *4 85/70 °C 3 Full Array 200 330 uA 1/2 of Full Array 150 230 1/4 of Full Array 130 190 |
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