Philips Semiconductors

Product specification

Three quadrant triacs

BTA208 series B

high commutation

Fig.7. Normalised gate trigger current

I

Fig.8. Normalised latching current I

versus junction temperature T

Fig.9. Normalised holding current I

versus junction temperature T

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z

pulse width t

Fig.12. Typical, critical rate of change of commutating

current, dI

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

BTA212

Tj / C

T2+ G+

T2+ G-

T2- G-

IGT(Tj)

IGT(25 C)

0

0.5

1

1.5

2

2.5

3

0

5

10

15

20

25

BT137

VT / V

IT / A

Tj = 125 C

Tj = 25 C

typ

max

Vo = 1.264 V

Rs = 0.0378 Ohms

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

TRIAC

Tj / C

IL(Tj)

IL(25 C)

10us

0.1ms

1ms

10ms

0.1s

1s

10s

0.01

0.1

1

10

BT137

tp / s

Zth j-mb (K/W)

t

p

P

t

D

bidirectional

unidirectional

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

TRIAC

Tj / C

IH(Tj)

IH(25C)

20

40

60

80

100

120

140

1

10

100

1000

BTA208

Tj / C

dIcom/dt (A/ms)

September 1997

4

Rev 1.200