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M30622M6P Datasheet(PDF) 34 Page - Renesas Technology Corp |
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M30622M6P Datasheet(HTML) 34 Page - Renesas Technology Corp |
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34 / 87 page  M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62P) 4 8 f o 3 0 0 2 , 7 0 . v o N 0 1 . 2 . v e R page 34 Table 5.6 Flash Memory Version Electrical Characteristics (1) for 100 cycle products (D3, D5, U3, U5) Min. Typ. Max. Word program time (VCC1=5.0V, Topr=25 °C) Block erase time (VCC1=5.0V, Topr=25 °C) Erase all unlocked blocks time (2) Lock bit program time ParameterUnit Standard 25 0.3 25 200 200 µs s s µs 4 X n Flash memory circuit stabilization wait time tPS 15 µs - - - - Symbol NOTES : 1.Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 °C unless otherwise specified. 2.n denotes the number of block erases. 3.Program and Erase Endurance refers to the number of times a block erase can be performed. If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times. For example, if a 4K bytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as one program and erase endurance. Data cannot be written to the same address more than once without erasing the block. (Rewrite prohibited) 4.Maximum number of E/W cycles for which operation is guaranteed. 5.Topr = -40 to 85 °C (D3, D7, U3, U7) / -20 to 85 °C (D5, D9, U5, U9). 6.Referenced to VCC1 = 2.7 to 5.5V at Topr = -20 to 85 °C (D9, U9) / -40 to 85 °C (D7, U7) unless otherwise specified. 7.Table 5.7 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.6. 8.To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary. Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the total number of times erasure is used. 9.Should erase error occur during block erase, attempt to execute clear status register command, then block erase command at least three times until erase error disappears. 10.Customers desiring E/W failure rate information should contact their Renesas technical support representative. Program and erase endurance (3) - 100 4K bytes block 8K bytes block 32K bytes block 64K bytes block Data hold time (5) 10year - 0.3 0.5 0.8 s s s Min. Typ. Max. Word program time (VCC1=5.0V, Topr=25 °C) Block erase time (VCC1=5.0V, Topr=25 °C) Lock bit program time ParameterUnit Standard 25 0.3 25 µs s µs - - - Symbol Program and erase endurance (3, 8, 9) - 10,000 (4) 4K bytes block Flash memory circuit stabilization wait time tPS µs Data hold time (5) 10year - cycle cycle 15 4 4 4 4 Table 5.8 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics (at Topr = 0 to 60oC) Flash program, erase voltage Flash read operation voltage VCC1 = 3.3 V ± 0.3 V or 5.0 V ± 0.5 V VCC1=2.7 to 5.5 V Table 5.7 Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (D7, D9, U7, U7) (Block A and Block 1 (7)) |
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