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RA07M3843M Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RA07M3843M
Description  RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M3843M
RA07M3843M
MITSUBISHI ELECTRIC
24 Jan 2006
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG=0V, Pin=0mW
12
V
VDD
Drain Voltage
ZL=50Ω, VGG<3.5V
9.2
V
VGG
Gate Voltage
4
V
IDD
Total Current
3.5
A
Pin
Input Power
70
mW
Pout
Output Power
10
W
Tcase(OP)
Operation Case Temperature Range
f=378-430MHz, VGG<3.5V
ZG=ZL=50Ω
-30 to +90
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
378
430
MHz
Pout
Output Power
VDD=7.2V,VGG=3.5V, Pin=50mW
7
W
η
T
Total Efficiency
40
%
2fo
2
nd Harmonic
-25
dBc
ρ
in
Input VSWR
4:1
IGG
Gate Current
Pout=6.5W (VGG control),
VDD=7.2V,
Pin=50mW
1
mA
IDD
Leakage Current
VDD=9.2V, VGG=0V, Pin=0mW
100
µA
Stability
VDD=4.0-9.2V, Pin=25-70mW, Pout<8W (VGG control),
Load VSWR=4:1
No parasitic oscillation
Load VSWR Tolerance
VDD=9.2V, Pin=50mW, Pout=7.0W (VGG control),
Load VSWR=20:1
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.




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