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BT300B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT300B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Thyristors BT300B series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - - 1.8 K/W junction to mounting base R th j-a Thermal resistance minimum footprint, FR4 board - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA I L Latching current V D = 12 V; IGT = 0.1 A - 10 40 mA I H Holding current V D = 12 V; IGT = 0.1 A - 10 20 mA V T On-state voltage I T = 12 A - 1.35 1.6 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V V D = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V I D, IR Off-state leakage current V D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; off-state voltage exponential waveform. Gate open circuit 50 100 - V/ µs R GK = 100 Ω 200 1000 - V/ µs t gt Gate controlled turn-on I TM = 10 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dI G/dt = 5 A/µs t q Circuit commutated V D = 67% VDRM(max); Tj = 125 ˚C; - 70 - µs turn-off time I TM = 12 A; VR = 25 V; dITM/dt = 30 A/µs; dV D/dt = 50 V/µs; RGK = 100 Ω May 1997 2 Rev 1.000 |
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