HN29WB800R-10 datasheet(10/37 Pages) HITACHI

Part #	HN29WB800R-10

Description	1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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10 / 37 page

HN29WT800 Series, HN29WB800 Series

10

BYTE Mode (BYTE = V

IL)

Mode

CE

OE

WE

RP

RDY/

Busy

I/O0 to I/O7

Read

Array

V

IL

V

IL

V

IH

V

IH

V

OH (High-Z)

Dout

Status register

V

IL

V

IL

V

IH

V

IH

×*5

Status Register Data

Lock bit status

V

IL

V

IL

V

IH

V

IH

×

Lock bit data (I/O6)

Identifier (Maker)*

1, *2

V

IL

V

IL

V

IH

V

IH

V

OH (High-Z)

07H

Identifier (Device)*

1, *3 V

IL

V

IL

V

IH

V

IH

V

OH (High-Z)

85H / 86H*

6

Output disable

V

IL

V

IH

V

IH

V

IH

×

High-Z

Standby

V

IH

×*5

V

IH

×

High-Z

Command write*

4

Program

V

IL

V

IH

V

IL

V

IH

×

Command/Data in

Erase

V

IL

V

IH

V

IL

V

IH

×

Command

Others

V

IL

V

IH

V

IL

V

IH

×

Command

Deep powerdown

××

×

V

IL

V

OH (High-Z)

High-Z

Notes: 1. The command programming mode is used to output the identifier code. Refer to the table of

Software Command Definition.

2. A0 = V

IL

3. A0 = V

IH

4. Refer to the table of Software Command Definition. Programming and erase operation begins after

mode setting by command input.

5.

× can be V

IL or VIH for control pins, and VOL or VOH (High-Z) for RDY/Busy pin. The RDY/Busy is an

open drain output pin and indicates status of the internal WSM. When low, it indicates the WSM is

Busy performing an operation. A pull-up resistor of 10 k to 100 k

Ω is required to allow the

RDY/

Busy signal to transition high indicating a Ready WSM condition.

6. 85H: HN29WT800 Series, 86H: HN29WB800 Series.

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HN29WB800R-10 Datasheet(PDF) 10 Page - Hitachi Semiconductor

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