Philips Semiconductors

Product specification

Thyristors

BT168W series

logic level for RCD/ GFI/ LCCB applications

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated,

sensitive

gate

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

MAX. UNIT

thyristors

in

a

plastic

envelope

suitable

for

surface

mounting,

BT168

BW

DW

EW

GW

intended for use in Residual Current

V

Repetitive peak

200

400

500

600

V

Devices/ Ground Fault Interrupters/

V

RRM

off-state voltages

Leakage Current Circuit Breakers

I

T(AV)

Average on-state

0.6

0.6

0.6

0.6

A

(RCD/ GFI/ LCCB)

applications

current

where a minimum I

I

T(RMS)

RMS on-state current

1111

A

These devices may be interfaced

I

TSM

Non-repetitive peak

8888

A

directly

to

microcontrollers,

logic

on-state current

integrated circuits and other low

power gate trigger circuits.

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

cathode

2

anode

3

gate

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BDE

G

V

Repetitive peak off-state

-

200

1

400

1

500

1

600

1

V

voltages

I

T(AV)

Average on-state current

half sine wave;

-

0.63

A

T

I

T(RMS)

RMS on-state current

all conduction angles

-

1

A

I

TSM

Non-repetitive peak

t = 10 ms

-

8

A

on-state current

t = 8.3 ms

-

9

A

half sine wave;

T

I

t = 10 ms

-

0.32

A

dI

Repetitive rate of rise of

I

-

50

A/

µs

on-state current after

dI

triggering

I

GM

Peak gate current

-

1

A

V

GM

Peak gate voltage

-

5

V

V

RGM

Peak reverse gate voltage

-

5

V

P

GM

Peak gate power

-

2

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.1

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

ak

g

4

1

23

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/

µs.

September 1997

1

Rev 1.100