Electronic Components Datasheet Search |
|
BT168W Datasheet(PDF) 1 Page - NXP Semiconductors |
|
BT168W Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT168 BW DW EW GW intended for use in Residual Current V DRM, Repetitive peak 200 400 500 600 V Devices/ Ground Fault Interrupters/ V RRM off-state voltages Leakage Current Circuit Breakers I T(AV) Average on-state 0.6 0.6 0.6 0.6 A (RCD/ GFI/ LCCB) applications current where a minimum I GT limit is needed. I T(RMS) RMS on-state current 1111 A These devices may be interfaced I TSM Non-repetitive peak 8888 A directly to microcontrollers, logic on-state current integrated circuits and other low power gate trigger circuits. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BDE G V DRM, VRRM Repetitive peak off-state - 200 1 400 1 500 1 600 1 V voltages I T(AV) Average on-state current half sine wave; - 0.63 A T sp ≤ 112 ˚C I T(RMS) RMS on-state current all conduction angles - 1 A I TSM Non-repetitive peak t = 10 ms - 8 A on-state current t = 8.3 ms - 9 A half sine wave; T j = 25 ˚C prior to surge I 2tI2t for fusing t = 10 ms - 0.32 A 2s dI T/dt Repetitive rate of rise of I TM = 2 A; IG = 10 mA; - 50 A/ µs on-state current after dI G/dt = 100 mA/µs triggering I GM Peak gate current - 1 A V GM Peak gate voltage - 5 V V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - 2 W P G(AV) Average gate power over any 20 ms period - 0.1 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature ak g 4 1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. September 1997 1 Rev 1.100 |
Similar Part No. - BT168W |
|
Similar Description - BT168W |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |