BT150M-600R datasheet(3/6 Pages) PHILIPS

Part #	BT150M-600R

Description	Thyristors logic level

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Thyristors

BT150S series

logic level

BT150M series

Fig.1. Maximum on-state dissipation, P

tot, versus

average on-state current, I

T(AV), where

a = form factor = I

T(RMS)/ IT(AV).

Fig.2. Maximum permissible non-repetitive peak

on-state current I

TSM, versus pulse width tp, for

sinusoidal currents, t

p ≤ 10ms.

Fig.3. Maximum permissible rms current I

T(RMS) ,

versus mounting base temperature T

mb.

Fig.4. Maximum permissible non-repetitive peak

on-state current I

TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.5. Maximum permissible repetitive rms on-state

current I

T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T

mb ≤ 111˚C.

Fig.6. Normalised gate trigger voltage

V

GT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0

0.5

1

1.5

2

2.5

3

0

1

2

3

4

5

6

a = 1.57

1.9

2.2

2.8

4

BT148

IF(AV) / A

Ptot / W

Tmb(max) / C

125

122

119

116

113

110

107

conduction

angle

form

factor

degrees

30

60

90

120

180

4

2.8

2.2

1.9

1.57

a

1

1000

0

10

20

30

40

10

100

Number of half cycles at 50Hz

ITSM / A

T

ITSM

time

I

T

Tj initial = 25 C max

10

100

1000

BT148

ITSM / A

10us

100us

1ms

10ms

T / s

time

T

Tj initial = 25 C max

T

I

ITSM

dI /dt limit

T

0.01

0.1

1

10

0

2

4

6

8

10

12

BT150

surge duration / s

IT(RMS) / A

-50

0

50

100

0

1

2

3

4

5

BT148Z

Tmb / C

IT(RMS) / A

111 C

0

2

-50

0

50

100

150

0.4

0.6

0.8

1

1.2

1.4

1.6

BT151

Tj / C

VGT(Tj)

VGT(25 C)

October 1997

3

Rev 1.100

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