DCR1910V80 datasheet(3/9 Pages) DYNEX

Part #	DCR1910V80

Description	Phase Control Thyristor Preliminary Information

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Manufacturer	DYNEX [Dynex Semiconductor]

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SEMICONDUCTOR

DCR1910V85

3/9

www.dynexsemi.com

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Max.

Units

IRRM/IDRM

Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125°C

-

300

mA

dV/dt

Max. linear rate of rise of off-state voltage

To 67% VDRM, Tj = 125°C, gate open

-

1500

V/µs

dI/dt

Rate of rise of on-state current

From 67% VDRM to 2x IT(AV)

Repetitive 50Hz

-

150

A/µs

Gate source 30V, 10

Ω,

Non-repetitive

-

300

A/µs

tr < 0.5µs, Tj = 125°C

VT(TO)

Threshold voltage – Low level

100A to1000A at Tcase = 125°C

-

0.9

V

Threshold voltage – High level

1000A to 7200A at Tcase = 125°C

-

1.3

V

rT

On-state slope resistance – Low level

100A to 1000A at Tcase = 125°C

-

0.888

m

Ω

On-state slope resistance – High level

1000A to 7200A at Tcase = 125°C

-

0.55

m

Ω

tgd

Delay time

VD = 67% VDRM, gate source 30V, 10

Ω

TBD

µs

tr = 0.5µs, Tj = 25°C

tq

Turn-off time

Tj = 125°C, V R = 200V, dI/dt = 1A/µs,

-

1200

µs

dVDR/dt = 20V/µs linear

QS

Stored charge

IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,

4800

8000

µC

IL

Latching current

Tj = 25°C, V D = 5V

TBD

mA

IH

Holding current

Tj = 25°C, R G-K =

∞, ITM = 500A, IT = 5A

TBD

mA

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