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BQ4024MA-85 Datasheet(PDF) 6 Page - List of Unclassifed Manufacturers

Part # BQ4024MA-85
Description  128Kx16 Nonvolatile SRAM
Download  12 Pages
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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6
Sept. 1992
Write Cycle (TA = 0 to 70°C, VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
-85
-120
Units
Conditions/Notes
Min.
Max.
Min.
Max.
tWC
Write cycle time
85
-
120
-
ns
tCW
Chip enable to end of write
75
-
100
-
ns
(1)
tAW
Address valid to end of write
75
-
100
-
ns
(1)
tAS
Address setup time
0-0-
ns
Measured from address valid to be-
ginning of write. (2)
tWP
Write pulse width
65
-
85
-
ns
Measured from beginning of write to
end of write. (1)
tWR1
Write recovery time
(write cycle 1)
5-5-
ns
Measured from WE going high to end
of write cycle. (3)
tWR2
Write recovery time
(write cycle 2)
15-15-
ns
Measured from CE going high to end
of write cycle. (3)
tDW
Data valid to end of write
35
-
45
-
ns
Measured to first low-to-high transi-
tion of either CE or WE.
tDH1
Data hold time
(write cycle 1)
0-0-
ns
Measured from WE going high to end
of write cycle.(4)]
tDH2
Data hold time
(write cycle 2)
10-10-
ns
Measured from CE going high to end
of write cycle. (4)
tWZ
Write enabled to output in
high-Z
0
30
0
40
ns
I/O pins are in output state. (5)
tOW
Output active from end of
write
0-0-
ns
I/O pins are in output state. (5)
Notes:
1.
A write ends at the earlier transition of CE going high and WE going high.
2.
A write occurs during the overlap of a low CE and a low WE. A write begins at the later
transition of CE going low and WE going low.
3.
Either tWR1 or tWR2 must be met.
4.
Either tDH1 or tDH2 must be met.
5.
If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in
high-impedance state.
bq4024/bq4024Y


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