BT134-800E datasheet(2/6 Pages) PHILIPS

Part #	BT134-800E

Description	Triacs sensitive gate

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Triacs

BT134 series

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance

full cycle

-

3.0

K/W

junction to mounting base

half cycle

-

3.7

K/W

R

th j-a

Thermal resistance

in free air

-

100

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT134-

...

...F

...G

I

GT

Gate trigger current

V

D = 12 V; IT = 0.1 A

T2+ G+

-

5

35

25

50

mA

T2+ G-

-

8

35

25

50

mA

T2- G-

-

11

35

25

50

mA

T2- G+

-

30

70

100

mA

I

L

Latching current

V

D = 12 V; IGT = 0.1 A

T2+ G+

-

7

20

30

mA

T2+ G-

-

16

30

45

mA

T2- G-

-

5

20

30

mA

T2- G+

-

7

30

45

mA

I

H

Holding current

V

D = 12 V; IGT = 0.1 A

-

5

15

30

mA

V

T

On-state voltage

I

T = 5 A

-

1.4

1.70

V

GT

Gate trigger voltage

V

D = 12 V; IT = 0.1 A

-

0.7

1.5

V

D = 400 V; IT = 0.1 A;

0.25

0.4

-

V

T

j = 125 ˚C

I

D

Off-state leakage current

V

D = VDRM(max);

-

0.1

0.5

mA

T

j = 125 ˚C

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT134-

...

...F

...G

dV

D/dt

Critical rate of rise of

V

DM =67% VDRM(max);

100

50

200

250

-

V/

µs

off-state voltage

T

j = 125 ˚C; exponential

waveform; gate open

circuit

dV

com/dt

Critical rate of change of

V

DM = 400 V; Tj = 95 ˚C;

-

10

50

-

V/

µs

commutating voltage

I

T(RMS) = 4 A;

dI

com/dt = 1.8 A/ms; gate

open circuit

t

gt

Gate controlled turn-on

I

TM = 6 A; VD = VDRM(max);-

-

2

-

µs

time

I

G = 0.1 A;

dI

G/dt = 5 A/µs;

August 1997

2

Rev 1.200

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