BSX46-10 datasheet(4/8 Pages) PHILIPS

Part #	BSX46-10

Description	NPN medium power transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

1997 Apr 23

4

Philips Semiconductors

Product speciﬁcation

NPN medium power transistors

BSX45; BSX46; BSX47

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

ICBO

collector cut-off current

BSX45; BSX46

IE = 0; VCB =60V

−−

30

nA

IE = 0; VCB =60V; Tamb = 150 °C

−−

10

µA

ICBO

collector cut-off current

BSX47

IE = 0; VCB =80V

−−

30

nA

IE = 0; VCB =80V; Tamb = 150 °−

−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

10

nA

hFE

DC current gain

IC = 100 µA; VCE =1V

BSX45-10; BSX46-10; BSX47-10

15

40

−

BSX45-16; BSX46-16

25

90

−

hFE

DC current gain

IC = 100 mA; VCE =1V

BSX45-10; BSX46-10; BSX47-10

63

100

160

BSX45-16; BSX46-16; BSX47-16

100

160

250

hFE

DC current gain

IC = 500 mA; VCE =1V

BSX45-10; BSX46-10; BSX47-10

25

40

−

BSX45-16; BSX46-16

35

60

−

hFE

DC current gain

IC = 1 A; VCE =1V

BSX45-10; BSX46-10; BSX47-10

−

20

−

BSX45-16; BSX46-16

−

30

−

VCEsat

collector-emitter saturation voltage

IC = 1 A; IB = 100 mA

BSX45; BSX46

−−

1V

VCEsat

collector-emitter saturation voltage

IC = 500 mA; IB =25mA

BSX47

−−

900

mV

VBE

base-emitter voltage

IC = 100 mA; VCE =1V

−−

1V

IC = 500 mA; VCE = 1 V

0.75

−

1.5

V

IC = 1 A; VCE =1V

−−

2V

Cc

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

BSX45

−−

25

pF

BSX46

−−

20

pF

BSX47

−−

15

pF

Ce

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−−

80

pF

fT

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz 50

−−

MHz

F

noise ﬁgure

IC = 100 µA; VCE =5V; RS =1kΩ;

f = 1 kHz; B = 200 Hz

−

3.5

−

dB

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = 100 mA; IBon = 5 mA;

IBoff = −5mA

−−

200

ns

toff

turn-off time

−−

850

ns

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