BSW66 datasheet(2/8 Pages) PHILIPS

Part #	BSW66

Description	NPN switching transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 8 page

1997 May 05

2

Philips Semiconductors

Product speciﬁcation

NPN switching transistors

BSW66A; BSW67A; BSW68A

FEATURES

• High current (max. 1 A)

• High voltage (max. 150 V).

APPLICATIONS

• General purpose switching and amplification

• Industrial applications.

DESCRIPTION

NPN transistor in a TO-39 metal package.

PINNING

DESCRIPTION

1

emitter

2

base

3

collector, connected to case

Fig.1 Simplified outline (TO-39) and symbol.

handbook, halfpage

3

1

2

MAM317

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BSW66A

−−

100

V

BSW67A

−−

120

V

BSW68A

−−

150

V

VCEO

collector-emitter voltage

open base

BSW66A

−−

100

V

BSW67A

−−

120

V

BSW68A

−−

150

V

IC

collector current (DC)

−−

1A

Ptot

total power dissipation

Tcase ≤ 25 °C

−−

5W

hFE

DC current gain

IC = 10 mA; VCE =5V

30

−−

IC = 500 mA; VCE =5V

30

−−

fT

transition frequency

IC = 100 mA; VCE = 20 V; f = 100 MHz

−

130

−

MHz

toff

turn-off time

ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA

−

900

−

ns

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