1997 Jun 20

7

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BST80

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

DIMENSIONS (mm are the original dimensions)

SOT89

97-02-28

e

E

HE

B

0

2

4 mm

scale

b3

b2

b1

c

D

L

A

Plastic surface mounted package; collector pad for good heat transfer; 3 leads

SOT89

12

3

UNIT

A

mm

1.6

1.4

0.48

0.35

c

0.44

0.37

D

4.6

4.4

E

2.6

2.4

HE

4.25

3.75

e

3.0

w

0.13

e1

1.5

L

min.

0.8

b2

b1

0.53

0.40

b3

1.8

1.4

drain pad for good heat transfer; 3 leads