FEATURES:
• High Gain Bandwidth Product
f
t
= 12 GHz typ @ I
C
= 10 mA
• Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S
21
|
2 = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T
A = 25
oC)
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
BIPOLARICS, INC.
Part Number BRF610
SYMBOL
PARAMETERS & CONDITIONS
UNIT
MIN.
TYP.
MAX.
V
CE
=8V, I
C
= 10 mA unless stated
V
CBO
Collector-Base Voltage
9
V
V
CEO
Collector-Emitter Voltage
7
V
V
EBO
Emitter-Base Voltage
1.5
V
I
C CONT
Collector Current
20
mA
T
J
Junction Temperature
200
oC
T
STG
Storage Temperature
-65 to 150
oC
SYMBOL
PARAMETERS
RATING
UNITS
Absolute Maximum Ratings:
Insertion Power Gain:
f = 1.0 GHz
18.1
f = 2.0 GHz
12.8
NF
Noise Figure: V
CE
=8V, I
C
= 2mA
f = 1.0 GHz
dB
1.6
Z
S
= 50
Ω
C
CB
Collector Base Capacitance: V
CB
= 8V
f = 1MHz
pF
0.11
I
CBO
Collector Cutoff Current
: V
CB
=8V
µA
0.2
V
CE
= 8V, I
C
= 10 mA
f
t
|S
21
| 2
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF610is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF610an excellent choice for battery applications. From 10
mA to greater than 20mA, f
t is nominally 10 GHz. Maximum
recommended continuous current is 20 mA. A broad range of
packages are offered including SOT-23, SOT-143, plastic and
ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated
dice.
Gain Bandwidth Product
GHz
12
P
1d B
Power output at 1dB compression:
f = 1.0 GHz
dBm
12
G
1d B
Gain at 1dB compression:
f = 1.0 GHz
dBm
15
h
FE
Forward Current Transfer Ratio:
f = 1MHz
50
100
250
I
EBO
Emitter Cutoff Current : V
EB
=1V
µA
1.0
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