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ADA4841-1YRJZ-R7 Datasheet(PDF) 6 Page - Analog Devices |
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ADA4841-1YRJZ-R7 Datasheet(HTML) 6 Page - Analog Devices |
6 / 20 page ADA4841-1/ADA4841-2 Rev. C | Page 6 of 20 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage 12.6 V Power Dissipation See Figure 5 Common-Mode Input Voltage −VS − 0.5 V to +VS + 0.5 V Differential Input Voltage ±1.8 V Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature JEDEC J-STD-20 Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is specified for device soldered in circuit board for surface-mount packages. Table 5. Thermal Resistance Package Type θJA Unit 8-lead SOIC_N 125 °C/W 8-lead MSOP 130 °C/W 6-Lead SOT-23 170 °C/W Maximum Power Dissipation The maximum safe power dissipation for the ADA4841-1/ ADA4841-2 is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the amplifiers. Exceeding a junction temperature of 150°C for an extended period can result in changes in silicon devices, potentially causing degradation or loss of functionality. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the die due to the amplifier’s drive at the output. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). PD = Quiescent Power + (Total Drive Power − Load Power) () L OUT L OUT S S S D R V R V V I V P 2 2 − ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ × + × = RMS output voltages should be considered. If RL is referenced to −VS, as in single-supply operation, the total drive power is VS × IOUT. If the rms signal levels are indeterminate, consider the worst case, when VOUT = VS/4 for RL to midsupply. () ( ) L S S S D R V I V P 2 4 / + × = In single-supply operation with RL referenced to −VS, worst case is VOUT = VS/2. Airflow increases heat dissipation, effectively reducing θJA. In addition, more metal directly in contact with the package leads and through holes under the device reduces θJA. Figure 5 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 8-lead MSOP (145°C/W), 8-lead SOIC_N (125°C/W) and the 6-lead SOT-23 (170°C/W) on a JEDEC standard 4-layer board. θJA values are approximations. 2.0 0 –55 125 AMBIENT TEMPERATURE (°C) 1.5 1.0 0.5 –45 –35 –25 –15 –5 5 1525 35455565 758595 105 115 SOT-23 SOIC MSOP Figure 5. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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