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PDTC123YM Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTC123YM Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 5 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 10 kΩ 7. Characteristics Table 8: Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0A - - 1 µA VCE =30V; IB =0A; Tj = 150 °C -- 50 µA IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 700 µA hFE DC current gain VCE =5V; IC = 5 mA 35 - - VCEsat collector-emitter saturation voltage IC =10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC = 100 µA - 0.75 0.3 V VI(on) on-state input voltage VCE = 300 mV; IC = 20 mA 2.5 1.15 - V R1 bias resistor 1 (input) 1.54 2.2 2.86 k Ω R2/R1 bias resistor ratio 3.6 4.5 5.5 Cc collector capacitance VCB =10V; IE =ie =0A; f=1MHz -- 2 pF |
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