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PBSS305PZ Datasheet(PDF) 7 Page - NXP Semiconductors |
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PBSS305PZ Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 7 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor VCE = −2V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Collector current as a function of collector-emitter voltage; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 006aaa629 200 400 600 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (3) (2) (1) 006aaa635 VCE (V) 0 −5 −4 −2 −3 −1 −6 −8 −4 −2 −10 −12 −14 IC (A) 0 IB (mA) = −600 −120 −60 −240 −180 −540 −480 −420 −360 −300 006aaa630 −0.4 −0.8 −1.2 VBE (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (3) (2) (1) 006aaa633 −0.4 −0.8 −1.2 VBEsat (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (3) (2) (1) |
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