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PBSS303NX Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PBSS303NX
Description  30 V, 5.1 A NPN low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS303NX Datasheet(HTML) 3 Page - NXP Semiconductors

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PBSS303NX_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 August 2006
3 of 15
Philips Semiconductors
PBSS303NX
30 V, 5.1 A NPN low VCEsat (BISS) transistor
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
30
V
VCEO
collector-emitter voltage
open base
-
30
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
5.1
A
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
10.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
0.6
W
[2] -
1.65
W
[3] -
2.1
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
006aaa556
Tamb (°C)
−75
175
125
25
75
−25
1.0
0.5
1.5
2.0
2.5
Ptot
(W)
0
(3)
(2)
(1)


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