BLC6G22-100_6G22LS-100_1

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Objective data sheet

Rev. 01 — 30 January 2006

2 of 9

Philips Semiconductors

BLC6G22-100; BLC6G22LS-100

UHF power LDMOS transistor

1.3 Applications

2000 MHz to 2200 MHz frequency range.

2.

Pinning information

[1]

Connected to flange

3.

Ordering information

4.

Limiting values

Table 2:

Pinning

Pin

Description

Simplified outline

Symbol

BLC6G22-100 (SOT895-1)

1

drain

2

gate

3

source

[1]

BLC6G22LS-100 (SOT896-1)

1

drain

2

gate

3

source

[1]

3

2

1

sym112

1

3

2

3

2

1

sym112

1

3

2

Table 3:

Ordering information

Type number

Package

Name

Description

Version

BLC6G22-100

-

plastic flanged cavity package; 2 mounting slots; 2 leads

SOT895-1

BLC6G22LS-100 -

plastic earless flanged cavity package; 2 leads

SOT896-1

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

−0.5

+13

V

drain current

-

<tbd>

A

storage temperature

−65

+150

°C

junction temperature

-

225

°C