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NUF6001MUT2G Datasheet(PDF) 2 Page - ON Semiconductor |
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NUF6001MUT2G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NUF6001MU http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit ESD Discharge IEC61000−4−2 Contact Discharge VPP 18 kV DC Power per Resistor PR 100 mW DC Power per Package PT 600 mW Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 5.0 V Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 8.0 V Leakage Current IR VRWM = 3.3 V 10 100 nA Resistance RA IR = 20 mA 85 100 115 W Capacitance (Notes 1 and 2) Cd VR = 2.5 V, f = 1.0 MHz 17 22 pF Cut−Off Frequency (Note 3) f3dB Above this frequency, appreciable attenuation occurs 120 MHz 1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz. 2. Total line capacitance is 2 times the Diode Capacitance (Cd). 3. 50 W source and 50 W load termination. |
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