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NTLJF3117PTAG Datasheet(PDF) 2 Page - ON Semiconductor |
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NTLJF3117PTAG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTLJF3117P http://onsemi.com 2 SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 30 V DC Blocking Voltage VR 30 V Average Rectified Forward Current IF 2.0 A THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 83 °C/W Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Ref to 25°C 9.95 mV/ °C Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V TJ = 25°C −1.0 mA TJ = 85°C −10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V ±100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.4 −0.7 −1.0 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 2.44 mV/ °C Drain−to−Source On−Resistance RDS(on) VGS = −4.5, ID = −2.0 A 75 100 m W VGS = −2.5, ID = −2.0 A 101 135 VGS = −1.8, ID = −1.6 A 150 200 Forward Transconductance gFS VDS = −5.0 V, ID = −2.0 A 3.1 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = −10 V 531 pF Output Capacitance COSS 91 Reverse Transfer Capacitance CRSS 56 Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 5.5 6.2 nC Threshold Gate Charge QG(TH) 0.7 Gate−to−Source Charge QGS 1.0 Gate−to−Drain Charge QGD 1.4 Gate Resistance RG 8.8 W SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RG = 6.0 W 5.2 ns Rise Time tr 13.2 Turn−Off Delay Time td(OFF) 13.7 Fall Time tf 19.1 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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