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NTLGD3502N Datasheet(PDF) 4 Page - ON Semiconductor

Part # NTLGD3502N
Description  Power MOSFET 20 V, 5.8 A/4.6 A Dual N?묬hannel, DFN6 3x3 mm Package
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTLGD3502N Datasheet(HTML) 4 Page - ON Semiconductor

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NTLGD3502N
http://onsemi.com
4
TYPICAL MOSFET I N−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
3.1 V
3.5 V
100
°C
0
4
5
3
3
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
1
0
1
Figure 1. On−Region Characteristics
4
2
1.5
2.5
3
2
1
1
0
3
Figure 2. Transfer Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50
0
−25
25
1.0
0.6
50
125
100
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
TJ = −55°C
75
150
ID = 4.3 A
VGS = 4.5 V
4
25
°C
1.7
3.3 V
520
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS = 0 V
TJ = 150°C
2.3 V
2.5 V
100
10,000
VDS ≥ 10 V
10
15
VGS = 3.7 V to 6.5 V
5
10
10
5
4
3.5
0.1
0.2
0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
2.5
ID = 4.3 A
TJ = 25°C
1.5
2.5
4.5
TJ = 25°C
VGS = 4.5 V
0.0490
0.0510
0.0485
0.0495
6.0
0.0505
1000
TJ = 125°C
3.5
1.6
1.4
1.2
0.8
6
67
8
6
7
8
9
2.9 V
2.7 V
7
8
9
5.5
5.0
4.5
3.0
4.0
3.5
0.0500
1.1
0.7
1.5
1.3
0.9


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