NTK3134N datasheet(2/5 Pages) ONSEMI

Part #	NTK3134N

Description	Power MOSFET 20 V, 890 mA, Single N?묬hannel with ESD Protection, SOT??23

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NTK3134N

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

(Note 3)

RqJA

280

°C/W

Junction−to−Ambient – t = 5 s

(Note 3)

RqJA

228

Junction−to−Ambient – Steady State Minimum Pad

(Note 4)

RqJA

400

3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface mounted on FR4 board using the minimum recommended pad size

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown

Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

20

V

Drain−to−Source Breakdown

Voltage Temperature Coefficient

V(BR)DSS/TJ

ID = 250 mA, Reference to 25°C

18

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 16 V

TJ = 25°C

1.0

mA

TJ = 125°C

2.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±4.5 V

±0.5

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.45

1.2

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

2.4

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 890 mA

0.20

0.35

W

VGS = 2.5 V, ID = 780 mA

0.26

0.45

VGS = 1.8 V, ID = 700 mA

0.43

0.65

VGS = 1.5 V, ID = 200 mA

0.56

1.2

Forward Transconductance

gFS

VDS = 10 V, ID = 800 mA

1.6

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 16 V

79

120

pF

Output Capacitance

COSS

13

20

Reverse Transfer Capacitance

CRSS

9.0

15

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn On Delay Time

td(ON)

VGS = 4.5 V, VDS = 10 V, ID = 500 mA,

RG = 10 W

6.7

ns

Rise Time

tr

4.8

TurnOff Delay Time

td(OFF)

17.3

Fall Time

tf

7.4

DRAIN SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 350 mA

TJ = 25°C

0.75

1.2

V

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = 1.0 A, VDD = 20 V

8.1

ns

Charge Time

ta

6.4

Discharge Time

tb

1.7

Reverse Recovery Charge

QRR

3.0

nC

5. Pulse Test: pulse width = 300

ms, duty cycle = 2%

6. Switching characteristics are independent of operating junction temperatures

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