BF1206F datasheet(6/20 Pages) PHILIPS

Part #	BF1206F

Description	Dual N-channel dual gate MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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BF1206F_1

Product data sheet

Rev. 01 — 30 January 2006

6 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

(1) VG2-S = 2.5 V.

(2) VG2-S = 2.0 V.

(3) VG2-S = 1.5 V.

(4) VG2-S = 1.0 V.

VDS(A) = 2.8 V; Tj =25 °C.

(1) VG2-S = 2.5 V.

(2) VG2-S = 2.0 V.

(3) VG2-S = 1.5 V.

(4) VG2-S = 1.0 V.

VDS(A) = 2.8 V; Tj =25 °C.

Fig 4.

Ampliﬁer A: gate1 current as a function of

gate1 voltage; typical values

Fig 5.

Ampliﬁer A: forward transfer admittance as a

function of drain current; typical values

VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb =25 °C.

VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 kΩ; see

Figure 32.

Fig 6.

Ampliﬁer A: drain current as a function of gate1

current; typical values

Fig 7.

Ampliﬁer A: drain current as a function of gate1

supply voltage (=VGG); typical values

VG1−S (V)

0

2.5

2.0

1.0

1.5

0.5

001aad898

40

60

20

80

100

IG1

(

µA)

0

(1)

(2)

(3)

(4)

ID (mA)

016

12

48

001aad899

20

10

30

40

Yfs

(mS)

0

(1)

(2)

(3)

(4)

001aad900

IG1 (µA)

030

20

10

8

4

12

16

ID

(mA)

0

VGG (V)

03

2

1

001aad901

2

4

6

ID

(mA)

0

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BF1206F Datasheet(PDF) 6 Page - NXP Semiconductors

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