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BSH207 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BSH207 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification P-channel enhancement mode BSH207 MOS transistor ELECTRICAL CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = -10 µA -12 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = -1 mA -0.4 -0.6 - V T j = 150˚C -0.1 - - V R DS(ON) Drain-source on-state V GS = -4.5 V; ID = -1 A - 80 120 m Ω resistance V GS = -2.5 V; ID = -1 A - 117 150 m Ω V GS = -1.8 V; ID = -0.5 A - 140 180 m Ω V GS = -2.5 V; ID = -1 A; Tj = 150˚C - 175 230 m Ω g fs Forward transconductance V DS = -9.6 V; ID = -1 A 1.5 4.5 - S I GSS Gate source leakage current V GS = ±8 V; VDS = 0 V - ±10 ±100 nA I DSS Zero gate voltage drain V DS = -9.6 V; VGS = 0 V; - -50 -100 nA current T j = 150˚C - -13 -100 µA Q g(tot) Total gate charge I D = -1 A; VDD = -10 V; VGS = -4.5 V - 8.8 - nC Q gs Gate-source charge - 0.7 - nC Q gd Gate-drain (Miller) charge - 2.0 - nC t d on Turn-on delay time V DD = -10 V; ID = -1 A; - 2 - ns t r Turn-on rise time V GS = -8 V; RG = 6 Ω - 4.5 - ns t d off Turn-off delay time Resistive load - 45 - ns t f Turn-off fall time - 20 - ns C iss Input capacitance V GS = 0 V; VDS = -9.6 V; f = 1 MHz - 500 - pF C oss Output capacitance - 210 - pF C rss Feedback capacitance - 62 - pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain T a = 25 ˚C - - -1.52 A current I DRM Pulsed reverse drain current - - -6.09 A V SD Diode forward voltage I F = -0.62 A; VGS = 0 V - -0.62 -1.3 V t rr Reverse recovery time I F = -0.5 A; -dIF/dt = 100 A/µs; - 75 - ns Q rr Reverse recovery charge V GS = 0 V; VR = -9.6 V - 69 - nC August 1998 2 Rev 1.000 |
Similar Part No. - BSH207 |
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Similar Description - BSH207 |
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