Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

FEATURES

•

10

µs Short Circuit Withstand

•

Non Punch Through Silicon

•

Isolated Copper Baseplate

•

Lead Free construction

APPLICATIONS

•

Matrix Converters

•

Brushless Motor Controllers

•

Frequency Converters

The Powerline range

of

high

power

modules

includes half bridge, chopper, dual, single and bi-

directional switch configurations covering voltages

from 600V to 3300V and currents up to 3600A.

The DIM200WBS12-A000 is a bi-directional 1200V,

n channel enhancement mode, insulated

gate

bipolar transistor (IGBT) module. The IGBT has a

wide reverse bias safe operating area (RBSOA) plus

full 10

µs short circuit withstand.

The module incorporates an electrically isolated

base plate and low inductance construction enabling

circuit designers to optimise circuit layouts and

utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM200WBS12-A000

Note: When ordering, please use the whole part number.

.

KEY PARAMETERS

± 1200V

(typ)

4.3 V

(max)

200A

(max)

400A

Fig. 1 Half bridge circuit diagram

Outline type code: W

(See package details for further information)

Fig. 2 Module outline

DIM200WBS12-A000

Single Switch IGBT Module

DS5862-1.2 March 2006

(LN24533)