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MUR550APFG Datasheet(PDF) 2 Page - ON Semiconductor |
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MUR550APFG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MUR550APF, MURD550PF, MUR550PF http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 520 V Average Rectified Forward Current (Rated VR) TC = 65°C MUR550APF (Rated VR) TC = 160°C MURD550PF, MUR550PF IF(AV) 5.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) MUR550APF MURD550PF MUR550PF IFSM 85 75 100 A Operating Junction Temperature Range TJ −65 to +175 °C Storage Temperature Range Tstg −65 to +175 °C ESD Ratings: Machine Model = C Human Body Model = 3B ESD > 400 >8000 V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction−to−Case (Note 1) MURD550PF, MUR550PF RqJC 2.8 °C/W Thermal Resistance, Junction−to−Ambient MUR550APF MURD550PF (Note 3) RqJA Note 2 62 °C/W 1. Rating applies when surface mounted on the minimum pad sizes recommended. 2. See Note 2, Ambient Mounting Data. 3. 1 inch square pad size on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage Drop (Note 4) (IF = 5.0 A, TJ = 25°C) (IF = 5.0 A, TJ = 150°C) VF 1.15 0.98 V Maximum Instantaneous Reverse Current (Note 4) (VR = 520 V, TJ = 25°C) (VR = 520 V, TJ = 150°C) IR 5.0 400 mA Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C) trr 95 ns 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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