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BRS212 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BRS212 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Breakover diodes BRS212 series Fig.7. Switching current as a function of junction temperature. Fig.8. Minimum holding current as a function of temperature. Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; T j = 25˚C. Fig.10. Transient thermal impedance. Z th j-a = f(tp). -50 0 50 150 Tj / C IS / A 0.001 0.01 0.1 10 100 1 max typ min VD / V 1 10 100 1000 1 10 100 Cj / pF BR211-280 BR211-140 typ -50 0 50 150 Tj / C IH / A 0.001 0.01 0.1 10 100 1 min tp P t D Zth / (K/W) 0.1 1 10 100 1000 10us 1ms 0.1s 10s 1000s tp / s BR211 January 1997 4 Rev 1.000 |
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