BR211SM datasheet(3/6 Pages) PHILIPS

Part #	BR211SM

Description	Breakover diodes

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;

device triggered at the start of each pulse; T

j = 70˚C

prior to surge.

Fig.4. Normalised avalanche breakdown voltage V

(BR)

and V

(BO) as a function of temperature.

Fig.5. On-state current as a function of on-state

voltage; t

p = 200 µs to avoid excessive dissipation.

Fig.6. Maximum off-state current as a function of

temperature.

Fig.7. Switching current as a function of junction

temperature.

Fig.8. Minimum holding current as a function of

temperature.

1

10

100

1000

10000

0

5

10

15

20

BR211

Number of impulses

ITSM / A

I

ITSM2

time

-40

-20

0

20

40

60

80

100

Tj / C

ID / uA

0.1

1

10

100

max

-40

-20

0

20

40

60

80

100

Tj / C

V(BR)(Tj)

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

V(BR)(25 C)

-50

0

50

150

Tj / C

IS / A

0.001

0.01

0.1

10

100

1

max

typ

min

123

4

0

5

10

15

20

Tj = 25 C

Tj = 150 C

IT / A

VT / V

typ

max

-50

0

50

150

Tj / C

IH / A

0.001

0.01

0.1

10

100

1

min

August 1996

3

Rev 1.100

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